The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2022

Filed:

Apr. 15, 2021
Applicant:

Psiquantum Corp, Palo Alto, CA (US);

Inventors:

Chia-Jung Chung, Sunnyvale, CA (US);

Faraz Najafi, Palo Alto, CA (US);

George Kovall, Campbell, CA (US);

Vitor R. Manfrinato, San Jose, CA (US);

Vimal Kamineni, Mechanicville, NY (US);

Mark Thompson, Palo Alto, CA (US);

Syrus Ziai, Los Altos, CA (US);

Assignee:

PSIQUANTUM CORP., Palo Alto, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01J 1/02 (2006.01); G01J 1/44 (2006.01); H01B 12/06 (2006.01);
U.S. Cl.
CPC ...
G01J 1/0204 (2013.01); G01J 1/44 (2013.01); H01B 12/06 (2013.01); G01J 2001/442 (2013.01);
Abstract

A superconductor device is manufactured by depositing a barrier layer over a substrate including silicon, the barrier layer including silicon and nitrogen; depositing a seed layer for a superconductor layer over the barrier layer, the seed layer including aluminum and nitrogen; depositing the superconductor layer over the seed layer, the superconductor layer including a layer of a superconductor material, the barrier layer serving as an oxidation barrier between the layer superconductor material and the substrate; and depositing a silicon cap layer over the superconductor layer. In some embodiments, the superconductor device includes a waveguide and a metal contact at a sufficient distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.


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