The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2022

Filed:

Feb. 27, 2019
Applicant:

Sumco Corporation, Tokyo, JP;

Inventors:

Ryusuke Yokoyama, Tokyo, JP;

Hideki Sakamoto, Tokyo, JP;

Wataru Sugimura, Tokyo, JP;

Assignee:

SUMCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 30/04 (2006.01); C30B 15/10 (2006.01); C30B 15/20 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
C30B 30/04 (2013.01); C30B 15/10 (2013.01); C30B 15/20 (2013.01); C30B 29/06 (2013.01);
Abstract

A method of manufacturing monocrystalline silicon by flowing inert gas in a chamber, applying horizontal magnetic field to a silicon melt in a quartz crucible, and pulling up monocrystalline silicon includes: forming a flow distribution of a flow of the inert gas flowing between a lower end of a heat shield and a surface of the silicon melt in the quartz crucible to be plane asymmetric with respect to a plane defined by a crystal pull-up axis of the pull-up device and an application direction of the horizontal magnetic field and rotationally asymmetric with respect to the crystal pull-up axis: maintaining the formed plane asymmetric and rotationally asymmetric flow distribution in a magnetic-field-free state until a silicon material in the quartz crucible is completely melted; and applying the horizontal magnetic field to the completely melted silicon material and starting pulling up the monocrystalline silicon.


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