The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2022

Filed:

Jul. 15, 2016
Applicant:

Hewlett-packard Development Company, L.p., Houston, TX (US);

Inventors:

Chien-Hua Chen, Corvallis, OR (US);

Michael W. Cumbie, Corvallis, OR (US);

Devin Alexander Mourey, Corvallis, OR (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B01L 3/00 (2006.01); B01D 29/03 (2006.01); B01D 29/56 (2006.01); B01D 29/01 (2006.01); B81B 1/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B01L 3/502753 (2013.01); B01D 29/01 (2013.01); B01D 29/012 (2013.01); B01D 29/03 (2013.01); B01D 29/56 (2013.01); B01L 3/502707 (2013.01); B81B 1/006 (2013.01); B81C 1/00119 (2013.01); B01L 2200/0631 (2013.01); B01L 2300/0645 (2013.01); B01L 2300/0681 (2013.01); B01L 2300/0883 (2013.01); B01L 2300/0887 (2013.01); B01L 2400/0415 (2013.01); B81B 2201/10 (2013.01); B81B 2203/0338 (2013.01); B81B 2203/0353 (2013.01); B81C 2201/013 (2013.01); B81C 2201/0125 (2013.01); B81C 2203/03 (2013.01);
Abstract

A method may include etching a number of holes into a carrier wafer layer to form a plurality of filters in the carrier wafer layer, patterning a chamber layer over a first side of the carrier wafer layer to form chambers above each filter formed in the carrier wafer layer, forming a layer over the chamber layer, grinding a second side of the carrier wafer layer to expose the number of holes etched into the carrier wafer layer, and bonding a molded substrate to the carrier wafer layer opposite the chamber layer.


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