The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2022

Filed:

May. 22, 2020
Applicant:

Soochow University, Suzhou, CN;

Inventors:

Jianmei Lu, Suzhou, CN;

Najun Li, Suzhou, CN;

Assignee:

SOOCHOW UNIVERSITY, Suzhou, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01J 27/22 (2006.01); B01J 27/04 (2006.01); B01J 35/00 (2006.01); B01J 37/02 (2006.01); C02F 1/30 (2006.01); C02F 1/70 (2006.01); C02F 101/22 (2006.01);
U.S. Cl.
CPC ...
B01J 27/22 (2013.01); B01J 27/04 (2013.01); B01J 35/004 (2013.01); B01J 35/0013 (2013.01); B01J 37/0217 (2013.01); B01J 37/0219 (2013.01); C02F 1/30 (2013.01); C02F 1/70 (2013.01); C02F 2101/22 (2013.01); C02F 2305/10 (2013.01);
Abstract

The invention provides a titanium carbide nanosheet/layered indium sulfide heterojunction and an application of the same in degrading and removing water pollutants. A simple electrostatic self-assembly method is used to uniformly absorb indium ions on the surfaces of TiCnanosheets, which effectively inhibits the stacking of the nanosheets and is beneficial to the uniform growth of InSnanosheets on the surfaces of the TiC. The present invent overcomes two disadvantages of too fast photogenerated carrier recombination rate of InSand easy agglomeration of nano-scale InS, and effectively improves the separation efficiency and photocatalytic activity of photogenerated electron-hole of InS.


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