The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2022

Filed:

Jul. 04, 2019
Applicants:

Institut National DE LA Recherche Scientifique, Québec, CA;

University of Saskatchewan, Saskatoon, CA;

Inventors:

Sylvain Fourmaux, Drummondville, CA;

Jean-Claude Kieffer, Montréal, CA;

Emil Hallin, Riversides Estates, CA;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05G 2/00 (2006.01); G01N 33/00 (2006.01); G01N 23/041 (2018.01);
U.S. Cl.
CPC ...
H05G 2/008 (2013.01); G01N 23/041 (2018.02); G01N 33/0098 (2013.01);
Abstract

A X-ray source, comprising a laser, of a pulse duration of at most 40 fs, instantaneous power of at least about 80 TW, a pulse repetition rate of at least 1 Hz; an optical compressor spectrally shaping the laser beam; focusing optics in the range between f#10 and f#15; and a gas target of electron density after ionization by the laser beam in a range between 10cmand 10cm; wherein the focusing optics focuses the laser beam in the gas target, and interaction of the focused laser beam with the gas target generates an X-ray beam, with a focused laser amplitude a, given by a=0.855 [I(10W/cm)λ,(μm)], where Iis the on-target laser intensity and λis the laser wavelength, of at least 2 and a P/Pratio value of at least 20, with P being the beam power and Pc a critical power given by Pc=17 (n/n) GW where n is the electron density and nis a critical electron density at which the plasma acts as a mirror reflecting the laser beam.


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