The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2022

Filed:

Aug. 30, 2021
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Onur Aker, Agrate Brianza, IT;

Marco Passerini, Agrate Brianza, IT;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 3/07 (2006.01);
U.S. Cl.
CPC ...
H02M 3/073 (2013.01);
Abstract

Disclosed herein is a charge pump architecture in which boosting capacitors of adjacent stages are connected only by NMOS type transistors and comprising a first stage receiving a first voltage and outputting an internal voltage; a second stage receiving the internal voltage and outputting a second voltage at an output terminal, and an auxiliary stage connected to the output terminal, the first stage and second stage including a first type of MOS transistors transferring the voltage from input node internal boosting nodes and being cross-coupled; a second type of MOS transistors with their gate biased by a third type of MOS transistors and fourth type of MOS transistors; the third type of MOS transistors connecting the gate of the second type of MOS transistors; and the fourth type of MOS transistors connecting the gate of the second type of MOS transistors.


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