The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2022
Filed:
Mar. 13, 2019
Applicants:
Institute for Basic Science, Daejeon, KR;
Postech Academy-industry Foundation, Gyeongsangbuk-do, KR;
Inventors:
Hee Cheul Choi, Gyeongsangbuk-do, KR;
Hyungki Kim, Gyeongsangbuk-do, KR;
Assignees:
INSTITUTE FOR BASIC SCIENCE, Daejeon, KR;
POSTECH ACADEMY-INDUSTRY FOUNDATION, Gyeongsangbuk-do, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/38 (2006.01); C22C 28/00 (2006.01); C22F 1/16 (2006.01); H01M 10/0525 (2010.01); H01M 4/134 (2010.01);
U.S. Cl.
CPC ...
H01M 4/386 (2013.01); C22C 28/00 (2013.01); C22F 1/16 (2013.01); H01M 4/38 (2013.01); H01M 4/134 (2013.01); H01M 10/0525 (2013.01);
Abstract
The disclosure describes a nanowire for an anode material of a lithium ion cell and a method of preparing the same. The nanowire includes silicon (Si) and germanium (Ge). The nanowire has a content of the silicon (Si) higher than a content of the germanium (Ge) at a surface thereof, and has the content of germanium (Ge) higher than the content of the silicon (Si) at an inner part thereof.