The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2022

Filed:

Dec. 09, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

John Collins, Tarrytown, NY (US);

Ali Afzali-Ardakani, Ossining, NY (US);

Joel P. de Souza, Putnam Valley, NY (US);

Devendra K. Sadana, Pleasantville, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/36 (2006.01); H01M 4/38 (2006.01); H01M 4/587 (2010.01); H01M 4/62 (2006.01); H01M 10/0568 (2010.01); H01M 10/0569 (2010.01); H01M 10/052 (2010.01); H01M 10/0567 (2010.01);
U.S. Cl.
CPC ...
H01M 4/366 (2013.01); H01M 4/382 (2013.01); H01M 4/386 (2013.01); H01M 4/587 (2013.01); H01M 4/623 (2013.01); H01M 4/624 (2013.01); H01M 10/052 (2013.01); H01M 10/0567 (2013.01); H01M 10/0568 (2013.01); H01M 10/0569 (2013.01); H01M 2300/0025 (2013.01);
Abstract

An energy storage device is provided that includes a pre-lithiated silicon based anode and a carbon nanotube based cathode. The pre-lithiated silicon anode has a porous region and a non-porous region. The full cell energy storage device has high electrochemical performance which exhibits greater 200 rechargeable cycles with less than 25% after 10 charge discharge cycles relative to the first discharge cycle, a maximum specific discharge capacity greater than 300 mAh/g and a specific capacity of greater than 100 mAh/g for over 130 cycles. Such an energy storage device is scalable for a wide array of applications due to its wafer level processing and silicon-based substrate integrability.


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