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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11437611 B1

PDFFull Text
Date of Patent:
Sep. 06, 2022

Filed:

Mar. 27, 2018

Negative electrode active material, negative electrode including the same, secondary battery including the negative electrode, and preparation method of the negative electrode active material

Applicant:

Lg Chem, Ltd., Seoul, KR;

Inventors:

Dong Hyuk Kim, Daejeon, KR;

Eun Kyung Kim, Daejeon, KR;

Yong Ju Lee, Daejeon, KR;

Rae Hwan Jo, Daejeon, KR;

Jung Hyun Choi, Daejeon, KR;

Assignee:

LG ENERGY SOLUTION, LTD., Seoul, KR;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

William E McClain

Assistant Examiner:

Kirsten B Tysl

Int. Cl.
CPC ...
H01M 4/13 (2010.01); H01M 4/134 (2010.01); H01M 4/04 (2006.01); H01M 4/131 (2010.01); H01M 4/133 (2010.01); H01M 4/1391 (2010.01); H01M 4/1393 (2010.01); H01M 4/1395 (2010.01); H01M 4/36 (2006.01); H01M 4/38 (2006.01); H01M 4/58 (2010.01); H01M 10/0525 (2010.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 4/134 (2013.01); H01M 4/0428 (2013.01); H01M 4/0471 (2013.01); H01M 4/131 (2013.01); H01M 4/133 (2013.01); H01M 4/1391 (2013.01); H01M 4/1393 (2013.01); H01M 4/1395 (2013.01); H01M 4/366 (2013.01); H01M 4/386 (2013.01); H01M 4/58 (2013.01); H01M 10/0525 (2013.01); H01M 2004/027 (2013.01);
Abstract

A negative electrode active material and a method for preparing a negative electrode active material, comprising preparing a silicon-based compound including SiO, wherein 0.5<x<1.3, and forming a crystalline carbon coating layer on the silicon-based compound through a chemical vapor deposition method using an organometallic compound as a source, wherein the organometallic compound is at least any one selected from the group consisting of aluminum acetylacetonate, aluminum ethoxide, aluminum phenoxide, aluminum acetate, aluminum tributoxide, and a combination thereof.

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