The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2022

Filed:

May. 11, 2020
Applicant:

Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;

Inventors:

Jin Hong Park, Hwaseong-si, KR;

Kil Su Jung, Hwaseong-si, KR;

Keun Heo, Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); H01L 27/2481 (2013.01); H01L 45/145 (2013.01);
Abstract

Provided is a negative differential resistance element having a 3-dimension vertical structure. The negative differential resistance element having a 3-dimension vertical structure includes: a substrate; a first electrode that is formed on the substrate to receive a current; a second semiconductor material that is formed in some region of the substrate; a first semiconductor material that is deposited in some other region and the first electrode of the substrate and some region of an upper end of the second semiconductor material; an insulator that has a part vertically erected from the substrate, the other part vertically erected from the second semiconductor material, and an upper portion stacked with a first semiconductor material; and a second electrode that is formed at an upper end of the second semiconductor material to output a current, thereby significantly reducing an area of the device and greatly improving device scaling and integration.


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