The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2022

Filed:

Jul. 17, 2020
Applicants:

Yonsei University, University-industry Foundation (Uif), Seoul, KR;

Seoul National University R&db Foundation, Seoul, KR;

Inventors:

Ki Tae Nam, Seoul, KR;

Ouk Hyun Cho, Seoul, KR;

Jang-Yeon Kwon, Seoul, KR;

Min-Kyu Song, Ulsan, KR;

Seok Namgung, Daejeon, KR;

Hyeohn Kim, Seoul, KR;

Yoon Ho Lee, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/085 (2013.01); G11C 13/0009 (2013.01); G11C 13/0019 (2013.01); G11C 13/0069 (2013.01); H01L 45/1266 (2013.01); H01L 45/14 (2013.01);
Abstract

A resistive switching memory device according to an exemplary embodiment includes: a first electrode; a second electrode formed to be separated from the first electrode; and an insulating layer formed near the first electrode and the second electrode, and changed to one of a high resistance state and a low resistance state when a conductive filament is controlled by a change of external humidity or a voltage applied through the first electrode or the second electrode.


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