The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2022

Filed:

May. 18, 2020
Applicant:

Tdk-micronas Gmbh, Freiburg, DE;

Inventors:

Maria-Cristina Vecchi, Freiburg, DE;

Reinhard Erwe, Freiburg, DE;

Martin Cornils, Freiburg, DE;

Kerwin Khu, Freiburg, DE;

Assignee:

TDK-Micronas GmbH, Freiburg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 33/07 (2006.01); H01L 43/06 (2006.01); H01L 43/04 (2006.01);
U.S. Cl.
CPC ...
H01L 43/065 (2013.01); G01R 33/07 (2013.01); H01L 43/04 (2013.01);
Abstract

A Hall sensor structure comprising a semiconductor body of a first conductivity type, a well region of a second conductivity type extending from a top side of the semiconductor body into the semiconductor body, at least three first semiconductor contact regions of the second conductivity type, each extending from a top side of the well region into the well region, at least one second semiconductor contact region of a second conductivity type, wherein the first semiconductor contact regions are spaced apart from one another and from an edge of the well region, a metallic connection contact layer is arranged on each first semiconductor contact region, the at least one second semiconductor contact region extends along the top side of the semiconductor body at least partially around the well region.


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