The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2022
Filed:
Mar. 30, 2021
Fuji Electric Co., Ltd., Kawasaki, JP;
Yasuyuki Hoshi, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A main semiconductor device element is a vertical MOSFET with a trench gate structure, containing silicon carbide as a semiconductor material, and having first and second p-type regions that mitigate electric field applied to bottoms of trenches. The first p-type regions are provided separate from the p-type base regions and face the bottoms of the trenches in a depth direction. The first p-type regions are disposed at an interval that is at most 1.0 μm, in a first direction that is a direction in which gate electrodes extend. The second p-type regions are provided between adjacent trenches of the trenches, separate from the first p-type regions and the trenches, and in contact with the p-type base regions. In the first direction that is the direction in which the trenches, the second p-type regions extend in a linear shape having a length that is substantially equal to that of the trenches.