The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2022
Filed:
Apr. 10, 2020
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Yoshinori Matsuno, Tokyo, JP;
Yasushi Takaki, Tokyo, JP;
Kensuke Taguchi, Tokyo, JP;
Kosuke Miyazaki, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/47 (2006.01); H01L 29/40 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0619 (2013.01); H01L 29/401 (2013.01); H01L 29/47 (2013.01); H01L 29/1608 (2013.01);
Abstract
A semiconductor device includes an insulating layer provided on a first impurity layer and a second impurity layer on a termination region side, a metallized layer provided on the first impurity layer and the second impurity layer exposed from the insulating layer and on the insulating layer, and an electrode provided on the metallized layer. A position of a first end of the metallized layer on the termination region side and a position of a second end of the electrode on the termination region side are the same in plan view.