The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2022
Filed:
Apr. 13, 2020
Canon Kabushiki Kaisha, Tokyo, JP;
Takashi Matsuda, Yokohama, JP;
CANON KABUSHIKI KAISHA, Tokyo, JP;
Abstract
The first photoelectric conversion unit and the second photoelectric conversion unit each include a first semiconductor region of a first conductivity type disposed at a first depth, a second semiconductor region of a second conductivity type disposed at a second depth, a third semiconductor region of the first conductivity type disposed at a third depth, and a fourth semiconductor region of the second conductivity type disposed at a fourth depth. An impurity concentration of the second semiconductor region of the first photoelectric conversion unit and an impurity concentration of the second semiconductor region of the second photoelectric conversion unit are different at the second depth.