The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2022

Filed:

Dec. 11, 2020
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

Ki-Tae Kim, Seoul, KR;

So-Young Noh, Goyang-si, KR;

Ui-Jin Chung, Goyang-si, KR;

Kyeong-Ju Moon, Paju-si, KR;

Hyuk Ji, Paju-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 27/15 (2006.01); H01L 33/62 (2010.01); H01L 29/786 (2006.01); H01L 33/54 (2010.01);
U.S. Cl.
CPC ...
H01L 27/1214 (2013.01); H01L 27/156 (2013.01); H01L 29/7869 (2013.01); H01L 29/78606 (2013.01); H01L 29/78696 (2013.01); H01L 33/54 (2013.01); H01L 33/62 (2013.01);
Abstract

A display apparatus in which a thin film transistor includes an oxide semiconductor pattern is disclosed. A gate electrode of the thin film transistor can overlap a channel region of the oxide semiconductor pattern. The gate electrode can have a structure in which a hydrogen barrier layer and a low-resistance electrode layer are stacked. A light-emitting device and an encapsulating element can be sequentially stacked on the thin film transistor. A thickness of the hydrogen barrier layer can be determined by a content of hydrogen per unit area of the encapsulating element. Thus, in the display apparatus, the characteristics deterioration of the thin film transistor due to hydrogen diffused from the encapsulating element can be prevented.


Find Patent Forward Citations

Loading…