The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2022

Filed:

Aug. 13, 2020
Applicant:

SK Hynix Inc., Icheon-si Gyeonggi-do, KR;

Inventors:

Changhan Kim, Icheon-si Gyeonggi-do, KR;

In Ku Kang, Icheon-si Gyeonggi-do, KR;

Sun Young Kim, Icheon-si Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/24 (2006.01); H01L 27/11556 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 27/11556 (2013.01); H01L 27/249 (2013.01);
Abstract

A semiconductor device includes a stacked structure including insulating layers and conductive layers alternately stacked on each other, a hard mask pattern located on the stacked structure, a channel structure passing through the hard mask pattern and the stacked structure, insulating patterns interposed between the insulating layers and the channel structure and each including a first surface and a second surface, wherein the first surface faces each of the insulating layers and is flat and the second surface faces the channel structure and includes a curved surface, and a memory layer interposed between the stacked structure and the channel structure and filling a space between the insulating patterns, wherein a sidewall of each of the conductive layers is located on an extending line of a sidewall of the hard mask pattern and the insulating patterns protrude farther towards the channel structure than the sidewall of the hard mask pattern.


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Kim, Changhan. (2022). Semiconductor device and manufacturing method of the semiconductor device (U.S. Patent No. 11437399). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11437399

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