The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2022

Filed:

Jun. 11, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kwang-Ho Park, Cheonan-si, KR;

Jae Hoon Kim, Seoul, KR;

Yong-Hoon Son, Yongin-si, KR;

Seung Jae Jung, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 27/108 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 27/108 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 27/0688 (2013.01); H01L 27/10805 (2013.01);
Abstract

A semiconductor memory device including first-first conductive lines on a substrate; second-first conductive lines on the first-first conductive lines; first contacts connected to the first-first conductive lines; and second contacts connected to the second-first conductive lines, wherein the first-first conductive lines protrude in a first direction beyond the second-first conductive lines; the first-first conductive lines include first regions having a first thickness, second regions having a second thickness, the second thickness being greater than the first thickness, and third regions having a third thickness, the third thickness being smaller than the first thickness and smaller than the second thickness, and the second regions of the first-first conductive lines are between the first regions of the first-first conductive lines and the third regions of the first-first conductive lines.


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