The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2022

Filed:

Apr. 21, 2020
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Je-Hsiung Lan, San Diego, CA (US);

Ranadeep Dutta, Del Mar, CA (US);

Jonghae Kim, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 27/06 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01); H03F 3/213 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0688 (2013.01); H01L 29/2003 (2013.01); H01L 29/66462 (2013.01); H01L 29/778 (2013.01); H03F 3/213 (2013.01);
Abstract

A 3D integrated circuit (3D IC) chip is described. The 3D IC chip includes a die having a compound semiconductor high electron mobility transistor (HEMT) active device. The compound semiconductor HEMT active device is composed of compound semiconductor layers on a single crystal, compound semiconductor layer. The 3D IC chip also includes an acoustic device integrated in the single crystal, compound semiconductor layer. The 3D IC chip further includes a passive device integrated in back-end-of-line layers of the die on the single crystal, compound semiconductor layer.


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