The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2022
Filed:
Aug. 27, 2020
Infineon Technologies Ag, Neubiberg, DE;
Thomas Kuenemund, Munich, DE;
INFINEON TECHNOLOGIES AG, Neubiberg, DE;
Abstract
A physically obfuscated circuit (POC) circuit including a plurality of subcircuits, each comprising at least one p-channel field effect transistor (FET) and at least one n-channel FET, connected such that the at least one n-channel FET, if supplied with an upper supply potential at its gate, supplies a lower supply potential to the gate of the at least one p-channel FET and the at least one p-channel FET, if supplied with the lower supply potential at its gate, supplies the upper supply potential to the gate of the at least one n-channel FET.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile