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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11437232 B1

PDFFull Text
Date of Patent:
Sep. 06, 2022

Filed:

Aug. 09, 2018

Method of manufacturing semiconductor device

Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Takaya Ishino, Yokkaichi, JP;

Atsushi Takahashi, Yokkaichi, JP;

Kazunori Zaima, Yokkaichi, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Mounir S Amer

Assistant Examiner:

Alexander Belousov

Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 27/11582 (2017.01); H01L 21/311 (2006.01); H01L 27/11575 (2017.01); H01L 27/1157 (2017.01);
U.S. Cl.
CPC ...
H01L 21/0234 (2013.01); H01L 21/0271 (2013.01); H01L 21/02115 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 27/1157 (2013.01); H01L 27/11575 (2013.01); H01L 27/11582 (2013.01);
Abstract

In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes performing a first process of forming a concave portion in the first film and forming a second film on a surface of the first film that is exposed in the concave portion by using a first gas containing a carbon element and a fluorine element. The method further includes performing a second process of exposing the second film to a second gas containing a hydrogen element or a fluid generated from the second gas.

Find Patent Forward Citations

Ishino, Takaya. (2022). Method of manufacturing semiconductor device (U.S. Patent No. 11437232). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11437232

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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