The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2022
Filed:
Apr. 25, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Youngjae Kim, Suwon-si, KR;
Jincheol Kim, Seoul, KR;
Ahreum Kim, Hwaseong-si, KR;
Homoon Shin, Hwaseong-si, KR;
Dooho Cho, Seoul, KR;
Yongsung Cho, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A nonvolatile memory includes; a memory cell array including memory cells commonly connected to a first signal line, a first row decoder including a first pass transistor configured to provide a driving voltage to one end of the first signal line, and a second row decoder including a second pass transistor configured to provide the driving voltage to an opposing end of the first signal line. An ON-resistance of the first pass transistor is different from an ON-resistance of the second pass transistor. A first wiring line having a first resistance connects the first pass transistor and the one end of the first signal line and a second wiring line having a second resistance different from the first resistance connects the second pass transistor and the opposing end of the first signal line.