The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2022

Filed:

Dec. 12, 2019
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

Kum Mi Oh, Seoul, KR;

In Sang Jung, Paju-si, KR;

Sung Hoon Kim, Ulsan, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/338 (2006.01); G02F 1/1368 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); G02F 1/1335 (2006.01); G02F 1/1343 (2006.01); G02F 1/1362 (2006.01);
U.S. Cl.
CPC ...
G02F 1/1368 (2013.01); H01L 27/124 (2013.01); H01L 27/127 (2013.01); H01L 29/66765 (2013.01); H01L 29/78627 (2013.01); G02F 1/133512 (2013.01); G02F 1/134372 (2021.01); G02F 1/136231 (2021.01); G02F 2201/40 (2013.01); H01L 29/78678 (2013.01); H01L 29/78696 (2013.01);
Abstract

Discussed is a method of manufacturing a LCD device, the method including: forming a gate in each of a plurality of pixel areas on a substrate; forming a gate insulator to cover the gate; forming a semiconductor layer on the gate insulator, and forming a photoresist (PR) on the semiconductor layer; doping high-concentration impurities at the semiconductor layer by using the photoresist (PR) as a mask to form an active layer, a source, and a drain; and doping low-concentration impurities at the semiconductor layer by using the photoresist (PR) as the mask to form a lightly doped drain (LDD) between the active layer and the source and between the active layer and the drain.


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