The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2022
Filed:
Jul. 17, 2018
Arkema France, Colombes, FR;
Centre National DE LA Recherche Scientifique, Paris, FR;
Universite DE Montpellier, Montpellier, FR;
Ecole Nationale Superieure DE Chimie DE Montpellier, Montpellier, FR;
Thierry Lannuzel, Villeurbanne, FR;
Fabrice Domingues Dos Santos, Paris, FR;
Thibaut Soulestin, Lyons, FR;
Vincent Ladmiral, Montpellier, FR;
Bruno Ameduri, Montpellier, FR;
ARKEMA FRANCE, Colombes, FR;
Abstract
A process for preparing a crosslinked fluoropolymer film, including the successive steps of: (1) formulating an ink containing: (a) the product of the reaction of triethylamine with at least one fluorinated copolymer obtained by radical copolymerization of monomers including: (i) vinylidene fluoride (VDF), (ii) trifluoroethylene (TrFE), (iii) at least one chlorinated monomer of formula —CXCl═CXXwhere X, Xand Xindependently denote H, F or CF, wherein at most one of X, Xand Xdenotes CF; (b) at least one crosslinking agent; (c) at least one photoinitiator; and (d) at least one organic solvent; (2) applying said ink in film form to a substrate; and (3) UV-irradiating said film. Also, the film capable of being obtained according to this process, and also to the uses thereof, in particular in the manufacture of (opto)electronic devices and more particularly in the manufacture of a gate dielectric layer in a field-effect transistor.