The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2022

Filed:

Dec. 02, 2020
Applicant:

Hrl Laboratories, Llc, Malibu, CA (US);

Inventors:

Xin N. Guan, Monterey Park, CA (US);

Shanying Cui, Calabasas, CA (US);

Florian G. Herrault, Agoura Hills, CA (US);

Assignee:

HRL Laboratories, LLC, Malibu, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C04B 35/26 (2006.01); C04B 35/622 (2006.01); H01F 1/117 (2006.01); H01F 1/00 (2006.01);
U.S. Cl.
CPC ...
C04B 35/2633 (2013.01); C04B 35/62218 (2013.01); H01F 1/0027 (2013.01); H01F 1/117 (2013.01); C04B 2235/3274 (2013.01); C04B 2235/5292 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/767 (2013.01); C04B 2235/96 (2013.01); Y10T 428/32 (2015.01);
Abstract

Some variations provide a magnetically anisotropic structure comprising a magnetically anisotropic film on a substrate, wherein the magnetically anisotropic film contains a plurality of discrete magnetic hexaferrite particles, wherein the film is characterized by an average film thickness from 1 micron to 5 millimeters, and wherein the magnetically anisotropic film contains from 2 wt % to 75 wt % organic matter. Some variations provide a magnetically anisotropic structure comprising an out-of-plane magnetically anisotropic film on a substrate, wherein the magnetically anisotropic film contains a plurality of discrete magnetic hexaferrite particles, wherein the film is characterized by an average film thickness from 1 micron to 5 millimeters, and wherein the magnetically anisotropic film contains a concentration of hexaferrite particles of at least 40 vol %. The magnetically anisotropic structures are fabricated at low temperatures so that the magnetically anisotropic film may be monolithically integrated into an integrated-circuit fabrication process.


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