The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2022
Filed:
Dec. 22, 2020
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 51/56 (2006.01); H01L 51/50 (2006.01);
U.S. Cl.
CPC ...
H01L 51/56 (2013.01); H01L 51/502 (2013.01); H01L 51/504 (2013.01);
Abstract
The invention relates to a method for producing a light-emitting diode, comprising a stack formed of a first semiconductor layerand of an active layera reflective electrodeextending in contact with the first semiconductor layercomprising a step of determining a distance between emitting dipoles that are located in the active layerand the reflective electrodefor which a lifetime of the emitting dipoles having a chosen orientation is longer than that of the emitting dipoles having the non-chosen orientation.
Le Blevennec, Gilles. (2022). Method for producing a light-emitting diode comprising a step of dimensioning a semiconductor layer (U.S. Patent No. 11430972). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11430972
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile