The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2022
Filed:
Aug. 04, 2020
Applicant:
SK Hynix Inc., Icheon, KR;
Inventors:
Myoung Sub Kim, Icheon, KR;
Tae Hoon Kim, Icheon, KR;
Beom Seok Lee, Icheon, KR;
Seung Yun Lee, Icheon, KR;
Hwan Jun Zang, Icheon, KR;
Byung Jick Cho, Icheon, KR;
Ji Sun Han, Icheon, KR;
Assignee:
SK hynix Inc., Icheon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); H01L 27/222 (2013.01); H01L 27/2481 (2013.01); H01L 43/02 (2013.01); H01L 43/12 (2013.01); H01L 45/06 (2013.01); H01L 45/16 (2013.01);
Abstract
A method for manufacturing an electronic device including a semiconductor memory may include forming a first carbon electrode material, surface-treating the first carbon electrode material to decrease a surface roughness of the first carbon electrode material, and forming a second carbon electrode material on the treated surface of the first carbon electrode material. The second carbon electrode material may have a thickness that is greater than a thickness of the first carbon electrode material.