The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2022

Filed:

Dec. 07, 2017
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Beijing Boe Display Technology Co., Ltd., Beijing, CN;

Inventors:

Huijuan Wang, Beijing, CN;

Meili Wang, Beijing, CN;

Zhenhua Lv, Beijing, CN;

Fei Wang, Beijing, CN;

Zezhou Yang, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 25/075 (2006.01); H01L 25/16 (2006.01); H01L 33/32 (2010.01); H01L 33/50 (2010.01); H01L 33/58 (2010.01); G02F 1/1335 (2006.01); G02F 1/13357 (2006.01); G09G 3/34 (2006.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); G02F 1/133514 (2013.01); G02F 1/133528 (2013.01); G02F 1/133603 (2013.01); G09G 3/3413 (2013.01); G09G 3/3426 (2013.01); H01L 25/0753 (2013.01); H01L 25/167 (2013.01); H01L 33/32 (2013.01); H01L 33/50 (2013.01); H01L 33/58 (2013.01); G02F 1/133548 (2021.01); G09G 2300/0452 (2013.01);
Abstract

The present disclosure relates to the field of LED display technologies, and provides an LED chip, an LED light emitting substrate, a display device and a control method thereof. Specifically, the LED chip comprises: an N-type semiconductor layer, a P-type semiconductor layer, as well as a quantum well layer between the N-type semiconductor layer and the P-type semiconductor layer. The quantum well layer is made of indium gallium nitride, wherein indium atoms have a molar ratio of greater than or equal to 0.3 in the indium gallium nitride.


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