The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2022

Filed:

Sep. 05, 2019
Applicant:

Panasonic Corporation, Osaka, JP;

Inventors:

Ayumu Yano, Osaka, JP;

Minato Seno, Osaka, JP;

Shin Nanba, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0747 (2012.01); H01L 31/0224 (2006.01); H01L 31/0352 (2006.01); H01L 31/18 (2006.01); H01L 31/20 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0747 (2013.01); H01L 31/022466 (2013.01); H01L 31/035272 (2013.01); H01L 31/1804 (2013.01); H01L 31/202 (2013.01); H01L 31/022458 (2013.01);
Abstract

A solar cell includes: a crystalline semiconductor substrate of a first conductivity type; a first semiconductor layer provided on a first region on one principal surface of the substrate; a second semiconductor layer provided on a second region on the one principal surface different from the first region; a first transparent electrode layer provided on the first semiconductor layer; and a second transparent electrode layer provided on the second semiconductor layer. The first semiconductor layer includes a first amorphous semiconductor layer of the first conductivity type and a first crystalline semiconductor part extending from the one principal surface toward the first transparent electrode layer. The second semiconductor layer includes a second amorphous semiconductor layer of a second conductivity type different from the first conductivity type.


Find Patent Forward Citations

Loading…