The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2022
Filed:
Jul. 29, 2019
Applicant:
Korea University Research and Business Foundation, Seoul, KR;
Inventors:
Hyun-Yong Yu, Seoul, KR;
Seung Geun Jung, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/47 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7839 (2013.01); H01L 21/0228 (2013.01); H01L 21/02175 (2013.01); H01L 29/47 (2013.01); H01L 29/517 (2013.01); H01L 29/66477 (2013.01);
Abstract
A semiconductor component is disclosed. The semiconductor component can include: a semiconductor layer injected with a same type of dopant; a gate electrode formed above the semiconductor layer with a gate insulation film positioned in-between; a dielectric layer formed on the semiconductor layer at both sides of the gate electrode; and source/drain electrodes each formed on the dielectric layer.
Quick Actions:
Yu, Hyun-Yong. (2022). Junctionless field-effect transistor having metal-interlayer-semiconductor structure and manufacturing method thereof (U.S. Patent No. 11430889). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11430889
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile