The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2022
Filed:
Jun. 03, 2020
Applicant:
Db Hitek Co., Ltd., Seoul, KR;
Inventor:
Young-Seok Kim, Seongnam-si, KR;
Assignee:
DB HiTek, Co., Ltd., Seoul, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7396 (2013.01); H01L 29/41708 (2013.01); H01L 29/66348 (2013.01);
Abstract
The present disclosure relates to an insulated gate bipolar transistor (IGBT) and, more particularly, to an insulated gate bipolar transistor, in which a barrier region is in a mesa between adjacent trench gates to divide the width of the mesa, thereby inducing the accumulation of hole carriers, and thus reducing an on-resistance (e.g., of the IGBT).