The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2022

Filed:

May. 18, 2018
Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Masashi Bando, Kanagawa, JP;

Yosuke Saito, Tokyo, JP;

Assignee:

SONY CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 27/30 (2006.01); H01L 27/28 (2006.01); H01L 51/42 (2006.01); H01L 51/44 (2006.01);
U.S. Cl.
CPC ...
H01L 27/307 (2013.01); H01L 27/286 (2013.01); H01L 51/4253 (2013.01); H01L 51/442 (2013.01); H01L 27/14647 (2013.01);
Abstract

An imaging element includes a photoelectric conversion unit formed by laminating a first electrode, a photoelectric conversion layerA, and a second electrode. Between the first electrodeand the photoelectric conversion layerA, a first semiconductor material layerBand a second semiconductor material layerBare formed from the first electrode side, and the second semiconductor material layerBis in contact with the photoelectric conversion layerA. The photoelectric conversion unit further includes an insulating layerand a charge accumulation electrodedisposed apart from the first electrodeso as to face the first semiconductor material layerBvia the insulating layer. When the carrier mobility of the first semiconductor material layerBis represented by μ, and the carrier mobility of the second semiconductor material layerBis represented by μ, μ<μis satisfied.


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