The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2022
Filed:
Apr. 03, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sunggil Kim, Yongin-si, KR;
Seulye Kim, Seoul, KR;
Dongkyum Kim, Suwon-si, KR;
Sungjin Kim, Hwaseong-si, KR;
Junghwan Kim, Seoul, KR;
Chanhyoung Kim, Suwon-si, KR;
Jihoon Choi, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A vertical semiconductor device may include a stacked structure, a channel structure and a lower connection structure. The stacked structure may include insulation layers and gate electrodes alternately repeatedly stacked. The stacked structure may be spaced apart from an upper surface of a substrate. The channel structure may include a charge storage structure and a channel. The channel structure may pass through the stacked structure. The lower connection structure may be formed on the substrate. The lower connection structure may be electrically connected with the channel and the substrate. A sidewall of the lower connection structure may include a protrusion disposed at a central portion of the sidewall from the upper surface of the substrate in a vertical direction. The vertical semiconductor device may have a high reliability.