The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2022
Filed:
Apr. 19, 2021
Shanghai Huali Microelectronics Corporation, Shanghai, CN;
Tianzhi Zhu, Shanghai, CN;
SHANGHAI HUALI MICROELECTRONICS CORPORATION, Shanghai, CN;
Abstract
The present disclosure provides a silicon controlled rectifier and a manufacturing method thereof. The silicon controlled rectifier comprises: a P-type substrate; an N-type well, an upper portion of which is provided with a P-type heavily doped regionand an N-type heavily doped region; an N-type well, an upper portion of which is provided with a P-type heavily doped regionand an N-type heavily doped region; and a P-type wellconnecting the N-type welland the N-type well, an upper portion of which is provided with a P-type heavily doped region; wherein a first electrode is in mirror symmetry with a second electrode with respect to the P-type heavily doped region, and shallow trench isolations are respectively provided between the P-type heavily doped regionand each of the N-type heavily doped regionand the N-type heavily doped region