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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11430736 B1

PDFFull Text
Date of Patent:
Aug. 30, 2022

Filed:

Aug. 24, 2020

Semiconductor device including having metal organic framework interlayer dielectric layer between metal lines and methods of forming the same

Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Ramy Nashed Bassely Said, San Jose, CA (US);

Raghuveer S. Makala, Campbell, CA (US);

Senaka Kanakamedala, San Jose, CA (US);

Yao-Sheng Lee, Tampa, FL (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:

The Marbury Law Group PLLC

Primary Examiner:

Farun Lu

Int. Cl.
CPC ...
H01L 23/535 (2006.01); H01L 27/11519 (2017.01); H01L 27/11524 (2017.01); H01L 27/11556 (2017.01); H01L 27/11565 (2017.01); H01L 27/1157 (2017.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 21/02 (2006.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); H01L 21/02244 (2013.01); H01L 21/76805 (2013.01); H01L 21/76843 (2013.01); H01L 21/76895 (2013.01); H01L 23/53252 (2013.01); H01L 23/53266 (2013.01); H01L 27/1157 (2013.01); H01L 27/11519 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 27/11582 (2013.01);
Abstract

A semiconductor structure includes first metal lines located above at least one semiconductor device, and a continuous metal organic framework (MOF) material layer including lower MOF portions that are located between neighboring pairs of first metal lines and an upper MOF matrix portion that continuously extends over the first metal lines and connected to each of the lower MOF portions.

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Said, Ramy Nashed Bassely. (2022). Semiconductor device including having metal organic framework interlayer dielectric layer between metal lines and methods of forming the same (U.S. Patent No. 11430736). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11430736

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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