The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2022

Filed:

Apr. 30, 2020
Applicant:

Meta Platforms Technologies, Llc, Menlo Park, CA (US);

Inventors:

Stephan Lutgen, Dresden, DE;

Thomas Lauermann, Cork, IE;

Assignee:

META PLATFORMS TECHNOLOGIES, LLC, Menlo Park, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 33/62 (2010.01); H01L 33/02 (2010.01); H01L 27/15 (2006.01); H01L 33/00 (2010.01); G02B 27/01 (2006.01); H01L 33/32 (2010.01); H01L 33/50 (2010.01); H01L 33/60 (2010.01);
U.S. Cl.
CPC ...
H01L 21/2007 (2013.01); G02B 27/0172 (2013.01); H01L 27/156 (2013.01); H01L 33/0062 (2013.01); H01L 33/0066 (2013.01); H01L 33/0093 (2020.05); H01L 33/025 (2013.01); H01L 33/32 (2013.01); H01L 33/502 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); G02B 2027/0116 (2013.01); G02B 2027/0178 (2013.01); H01L 2224/4852 (2013.01);
Abstract

Disclosed herein are techniques for bonding components of LEDs. According to certain embodiments, a method includes performing p-side processing of a first component. The p-side processing is performed from a direction adjacent to a surface of a p-side semiconductor layer of the first component that is opposite to an active light emitting layer of the first component. The method also includes aligning first contacts of the first component with second contacts of the second component, and subsequently performing hybrid bonding of the first component to the second component by performing dielectric bonding of a first dielectric material of the first component with a second dielectric material of the second component at a first temperature, and subsequently performing metal bonding of the first contacts of the first component with the second contacts of the second component by annealing the first contacts and the second contacts at a second temperature.


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