The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2022

Filed:

Mar. 06, 2020
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventor:

Satoshi Ito, Eniwa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1368 (2006.01); H01L 27/12 (2006.01); G02F 1/1362 (2006.01); G03B 21/00 (2006.01); H01L 21/02 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
G02F 1/1368 (2013.01); G02F 1/136209 (2013.01); G02F 1/136286 (2013.01); G03B 21/006 (2013.01); H01L 27/124 (2013.01); H01L 27/1248 (2013.01); H01L 27/1259 (2013.01); G02F 1/13685 (2021.01); G02F 1/136295 (2021.01); G02F 2202/104 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/02667 (2013.01); H01L 27/1274 (2013.01); H01L 29/66757 (2013.01); H01L 29/78675 (2013.01);
Abstract

An electro-optical device includes a translucent substrate, a transistor, a light-shielding body having light-shielding properties, including a metal and disposed between the substrate and the transistor, a first insulating layer having insulating properties and disposed between the light-shielding body and the transistor, the first insulating layer being in contact with the light-shielding body, and a second insulating layer having insulating properties and disposed between the first insulating layer and the transistor, the second insulating layer being in contact with the first insulating layer. A content of a predetermined element that is not an element of a main component in the first insulating layer is higher than a content of the predetermined element in the second insulating layer.


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