The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2022
Filed:
Dec. 12, 2019
Applicant:
Showa Denko K.k., Tokyo, JP;
Inventor:
Yohei Fujikawa, Hikone, JP;
Assignee:
SHOWA DENKO K.K., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 35/00 (2006.01); C30B 23/06 (2006.01); C23C 14/24 (2006.01); C23C 14/06 (2006.01); C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
C30B 23/066 (2013.01); C23C 14/0635 (2013.01); C23C 14/243 (2013.01); C30B 29/36 (2013.01); C30B 35/002 (2013.01);
Abstract
A SiC single crystal manufacturing apparatus of the present invention includes a growth container having a growth space in which a SiC single crystal is grown in a first direction and a heat insulating material which covers the growth container and includes a plurality of units, and the plurality of units include a first unit and a second unit having at least a thermal conductivity different from that of the first unit, and the first unit includes a container made of at least one of graphite and a metal carbide and a filler filled into the container in a replaceable manner.