The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2022

Filed:

Jun. 15, 2020
Applicant:

Akoustis, Inc., Huntersville, NC (US);

Inventors:

Dae Ho Kim, Cornelius, NC (US);

Mary Winters, Webster, NY (US);

Kenneth Fallon, Rochester, NY (US);

Jeffrey B. Shealy, Cornelius, NC (US);

Assignee:

AKOUSTIS, INC., Huntersville, NC (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03H 3/02 (2006.01); H03H 9/10 (2006.01); H03H 9/13 (2006.01); H03H 9/17 (2006.01); H03H 9/54 (2006.01); H01L 41/047 (2006.01); H01L 41/053 (2006.01); H01L 41/08 (2006.01); H01L 41/18 (2006.01); H01L 41/23 (2013.01); H01L 41/29 (2013.01); H01L 41/317 (2013.01); H01L 41/337 (2013.01); H03H 9/02 (2006.01); H03H 9/05 (2006.01);
U.S. Cl.
CPC ...
H03H 3/02 (2013.01); H01L 41/0475 (2013.01); H01L 41/0477 (2013.01); H01L 41/053 (2013.01); H01L 41/081 (2013.01); H01L 41/18 (2013.01); H01L 41/23 (2013.01); H01L 41/29 (2013.01); H01L 41/317 (2013.01); H01L 41/337 (2013.01); H03H 9/02015 (2013.01); H03H 9/02118 (2013.01); H03H 9/0523 (2013.01); H03H 9/105 (2013.01); H03H 9/13 (2013.01); H03H 9/173 (2013.01); H03H 9/175 (2013.01); H03H 9/177 (2013.01); H03H 9/547 (2013.01); H03H 2003/021 (2013.01); H03H 2003/025 (2013.01); Y10T 29/42 (2015.01);
Abstract

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. One or more patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the one or more electrodes and a planarized support layer is deposited over the sacrificial layer. The support layer is etched to form one or more cavities overlying the electrodes to expose the sacrificial layer. The sacrificial layer is etched to release the cavities around the electrodes. Then, a cap layer is fusion bonded to the support layer to enclose the electrodes in the support layer cavities.


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