The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2022

Filed:

Dec. 28, 2020
Applicants:

Otto-von-guericke-universitaet Magdeburg, Magdeburg, DE;

Azur Space Solar Power Gmbh, Berlin, DE;

Inventors:

Armin Dadgar, Berlin, DE;

André Strittmatter, Magdeburg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/30 (2006.01); H01S 5/22 (2006.01);
U.S. Cl.
CPC ...
H01S 5/3068 (2013.01); H01S 5/2227 (2013.01); H01S 5/3063 (2013.01); H01S 5/3077 (2013.01); H01S 5/3054 (2013.01);
Abstract

A semiconductor layer stack, a component made therefrom, a component module, and a production method is provided. The semiconductor layer stack has at least two layers (A, B), which, as individual layers, each have an energy position of the Fermi level in the semiconductor band gap, applying to the layer (A) and applying to the layer (B), with Ethe energy position of the Fermi level, Ethe energy position of the valence band, Ethe energy position of a conduction band and E−Ethe energy difference of the semiconductor band gap E, the thickness of the layers (A, B) being selected in such a way that a continuous space charge zone region over the layers (A, B) results.


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