The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2022

Filed:

Sep. 27, 2019
Applicant:

United States of America As Represented BY the Administrator of Nasa, Washington, DC (US);

Inventors:

Kevin Denis, Greenbelt, MD (US);

Karwan Rostem, Baltimore, MD (US);

Edward Wollack, Greenbelt, MD (US);

Elissa Williams, Lanham, MD (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 39/00 (2006.01); H01L 39/24 (2006.01); H03H 9/02 (2006.01); H01L 39/22 (2006.01); H01L 39/08 (2006.01);
U.S. Cl.
CPC ...
H01L 39/2406 (2013.01); H01L 39/08 (2013.01); H01L 39/22 (2013.01); H03H 9/02102 (2013.01);
Abstract

The present invention relates to a plurality of phononic devices and a method of manufacturing thereof. In one embodiment, highly sensitive superconducting cryogenic detectors integrate phononic crystals into their architecture. The phononic structures are designed to reduce the loss of athermal phonons, resulting in lower noise and higher sensitivity detectors. This fabrication process increases the qp generation recombination rate, thus, reducing the noise equivalent power (NEP) without sacrificing the scalability. A plurality of phononic devices, such as a kinetic inductance detector (KID), a transition edge sensor (TES) bolometer, and quarterwave backshort, can be manufactured according to the methods of the present invention.


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