The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2022

Filed:

Feb. 25, 2020
Applicant:

Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;

Inventors:

Geun Young Yeom, Seoul, KR;

Ki Seok Kim, Incheon, KR;

Ki Hyun Kim, Daejeon, KR;

You Jin Ji, Suwon-si, KR;

Ji Young Byun, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/032 (2006.01); H01L 31/113 (2006.01); H01L 31/0224 (2006.01); H01L 31/0352 (2006.01); H01L 31/102 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0324 (2013.01); H01L 31/022408 (2013.01); H01L 31/03529 (2013.01); H01L 31/102 (2013.01); H01L 31/1136 (2013.01);
Abstract

A photoelectronic device includes a substrate; a first electrode and a second electrode disposed on the substrate and spaced apart from each other in a first direction; and a transition metal dichalcogenide thin film including at least one first region and at least one second region. Each first region includes M+N transition metal dichalcogenide molecular layers and extends along the first direction. Each second region includes N transition metal dichalcogenide molecular layers extending from lower N transition metal dichalcogenide molecular layers of the first region. Each second region extends along the first direction and is adjacent to each first region. Both end regions in the first direction among the first and the second regions are electrically connected to the first electrode and the second electrode, respectively.


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