The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2022
Filed:
Oct. 03, 2018
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Shinsuke Watanabe, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/812 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 29/402 (2013.01); H01L 29/06 (2013.01); H01L 29/42316 (2013.01); H01L 29/812 (2013.01); H01L 29/861 (2013.01);
Abstract
A gate electrode (), a source electrode (), and a drain electrode () is provided on a surface of the semiconductor substrate (). An insulating film () covers the surface of the semiconductor substrate () in a region between the gate electrode () and the drain electrode (). A source field plate () is provided on the insulating film () and not connected with the drain electrode (). A diode () has a cathode connected with the source field plate () and an anode having a constant potential.