The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2022

Filed:

Jun. 30, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jungmin Park, Seoul, KR;

Haeryong Kim, Seongnam-si, KR;

Younsoo Kim, Yongin-si, KR;

Younggeun Park, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 28/56 (2013.01); H01L 27/10814 (2013.01); H01L 27/10855 (2013.01); H01L 27/10885 (2013.01); H01L 27/10826 (2013.01);
Abstract

A capacitor structure and a semiconductor device, the capacitor structure including a lower electrode on a substrate; a seed layer on the lower electrode; a dielectric layer on the seed layer; and an upper electrode on the dielectric layer, wherein the dielectric layer includes a ternary metal oxide having a chemical formula of ABO, in which each of A and B is independently a metal, and the seed layer includes a ternary metal oxide containing the same elements as that of the dielectric layer, the ternary metal oxide having a chemical formula of ABO, in which each of A and B is the same metal as A and B of the ternary metal oxide having a chemical formula of ABO, 0<x<3, and x is a real number.


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