The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2022
Filed:
Apr. 13, 2021
Applicant:
Uif (University Industry Foundation), Yonsei University, Seoul, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 33/32 (2010.01); H01L 33/62 (2010.01); H01L 29/24 (2006.01); H01L 33/00 (2010.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/15 (2013.01); H01L 21/0262 (2013.01); H01L 21/02568 (2013.01); H01L 27/156 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/78696 (2013.01); H01L 33/007 (2013.01); H01L 33/32 (2013.01); H01L 33/62 (2013.01); H01L 2933/0066 (2013.01);
Abstract
The inventive concept relates to a light emitting diode integrated with a transition metal dichalcogenide-based transistor and capable of simultaneously fabricating the transistor to have a monolithic integration structure. The transition metal dichalcogenide is formed on the light emitting diode device, thereby providing the light emitting diode integrated with the transistor without affecting the characteristics of the light emitting diode device.