The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2022

Filed:

Jan. 29, 2021
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventor:

Hiroyuki Oikawa, Chitose, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1362 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); G02F 1/136209 (2013.01); G02F 1/136286 (2013.01); H01L 27/1237 (2013.01); H01L 27/1255 (2013.01);
Abstract

In an electro-optical device, in an interlayer insulating layer provided in a layer between a transistor and a scanning line, a first opening and a second opening are respectively provided on both sides of a semiconductor layer in plan view, and a portion of a gate electrode is provided inside each of the first opening and the second opening. Therefore, the gate electrode configures a light shielding wall inside each of the first opening and the second opening. Of the first opening and the second opening, the first opening is provided at a position overlapping with the scanning line in plan view, and the gate electrode is electrically connected to the scanning line via the first opening. The second opening is provided at a position that does not overlap with the scanning line in plan view. Thus, the width of the scanning line can be made narrower.


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