The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2022
Filed:
Mar. 29, 2021
Mitsubishi Electric Corporation, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
Provided is a method for manufacturing a semiconductor device utilizing the feature that there are a plurality of semiconductor substrates to measure the thickness thereof, when measuring the thickness of a plurality of semiconductor substrates upon the laser annealing treatment. For each of at least one semiconductor substrate of the plurality of semiconductor substrates, a laser annealing treatment is performed by controlling a laser beam irradiating the semiconductor substrate based on self-thickness data being data of a result of measurement of a thickness of the semiconductor substrate and reference thickness data being data of a result of measurement of a thickness of at least one semiconductor substrate other than the semiconductor substrate among the plurality of semiconductor substrates.