The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2022

Filed:

Jun. 23, 2020
Applicant:

Murata Manufacturing Co., Ltd., Nagaokakyo, JP;

Inventor:

Hideyuki Hashimoto, Nagaokakyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C04B 35/468 (2006.01); C04B 35/64 (2006.01); H01G 4/012 (2006.01); H01G 4/12 (2006.01); H01G 4/30 (2006.01);
U.S. Cl.
CPC ...
H01G 4/1227 (2013.01); C04B 35/4682 (2013.01); C04B 35/64 (2013.01); H01G 4/012 (2013.01); H01G 4/30 (2013.01);
Abstract

A multilayer electronic component having a plurality of stacked dielectric layers and a plurality of internal electrode layers. Each of the dielectric layers has a plurality of crystal grains including a perovskite-type compound containing Ba, a first rare earth element and a second rare earth element. A difference between a positive trivalent ion radius of the first rare earth element and a positive divalent ion radius of Ba is smaller than a difference between a positive trivalent ion radius of the second rare earth element and the positive divalent ion radius of Ba. A sum of an amount of the first rare earth element and the second rare earth element in a first region along a grain boundary is larger than a sum of an amount of the first rare earth element and the second rare earth element in a second region in a center portion of the crystal grain.


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