The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2022

Filed:

Oct. 18, 2017
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Yoshitaka Nakamura, Osaka, JP;

Tsutomu Furuta, Hyogo, JP;

Hiroyoshi Yoden, Osaka, JP;

Mitsuo Yaguchi, Osaka, JP;

Takeshi Ueda, Hyogo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01L 1/00 (2006.01); G01L 1/20 (2006.01); B32B 9/04 (2006.01); C01G 23/047 (2006.01); G01K 11/00 (2006.01); G01L 1/24 (2006.01); G01L 9/02 (2006.01); G01L 11/02 (2006.01); G01N 25/02 (2006.01); H01L 29/84 (2006.01); C01G 23/04 (2006.01); B32B 9/00 (2006.01);
U.S. Cl.
CPC ...
G01L 1/20 (2013.01); B32B 9/00 (2013.01); B32B 9/045 (2013.01); C01G 23/04 (2013.01); C01G 23/047 (2013.01); G01K 11/00 (2013.01); G01L 1/24 (2013.01); G01L 9/02 (2013.01); G01L 9/025 (2013.01); G01L 11/02 (2013.01); G01L 11/025 (2013.01); G01N 25/02 (2013.01); H01L 29/84 (2013.01);
Abstract

A pressure sensoraccording to the first aspect of the invention includes: a substrate; and a functional elementwhich is laid on the substrateand is composed of functional titanium oxide including crystal grains of at least one of β-phase trititanium pentoxide (β-TiO) and λ-phase trititanium pentoxide (λ-TiO) and having the property that at least a portion of crystal grains of at least one of β-phase trititanium pentoxide (β-TiO) and λ-phase trititanium pentoxide (λ-TiO) change into crystal grains of titanium dioxide (TiO) when the functional titanium oxide is heated to 350° C. or higher. The substrateincludes a substrate thin-film sectionhaving a thin film form in which the thickness in the stacking direction of the substrateand the functional elementis smaller than that in the other directions.


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