The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2022

Filed:

Oct. 27, 2020
Applicant:

Advanced Micro Devices, Inc., Santa Clara, CA (US);

Inventors:

Jagadeesh Anathahalli Singrigowda, Bengaluru, IN;

Ashish Sahu, Whitefield, IN;

Rajesh Mangalore Anand, Bangalore, IN;

Aniket Bharat Waghide, Maharashtra, IN;

Girish Anathahalli Singrigowda, Bengaluru, IN;

Prasant Kumar Vallur, Hyderabad, IN;

Assignee:

Advanced Micro Devices, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/0948 (2006.01); H03K 17/687 (2006.01); H03K 19/0185 (2006.01); G05F 3/20 (2006.01); H03K 19/003 (2006.01); H03K 17/0812 (2006.01); G01R 19/165 (2006.01);
U.S. Cl.
CPC ...
H03K 17/6877 (2013.01); G01R 19/16538 (2013.01); G05F 3/205 (2013.01); H03K 17/08122 (2013.01); H03K 19/00315 (2013.01); H03K 19/018521 (2013.01); H03K 19/018571 (2013.01); H03K 19/0948 (2013.01);
Abstract

A driver circuit drives a high voltage I/O interface using stacked low voltage devices in the pull-up and pull-down portions of the driver. The transistor closest to the PAD in the pull-up portion receives a dynamically adjusted gate bias voltage adjusted based on the value of the data supplied to the output circuit and the transistor in the pull-down portion closest to the PAD receives the same dynamically adjusted gate bias voltage. The transistors closest to the power supply nodes receive gate voltages that are level shifted from the core voltage levels of the data supplied to the output circuit. The transistors in the middle of the pull-up and pull-down transistor stacks receive respective static gate voltages. The bias voltages are selected such that the gate-drain, source-drain, and gate-source voltages of the transistors in the output circuit do not exceed the voltage tolerance levels of the low voltage devices.


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